Integrated silicon secondary explosive detonator

Details Integrated silicon secondary explosive detonator Integrated silicon secondary explosive detonator

1988-10-24

1989-09-05

Jordan, Charles T.

Ammunition and explosives

Igniting devices and systems

Electrical primer or ignitor

1022027, F42C 1912

Patent

active

048628034

ABSTRACT:
A detonator device for a primary or secondary explosive comprising an integrated circuit consisting of a silicon wafer substrate on which an epitaxial layer of a desired thickness is first grown, followed by a covering insulating oxide layer. Metal contacts are deposited on the oxide layer in a photolithographic masking process to form a regular pattern of contact pairs. These contact pairs are joined together by a bridge element which may be made from the same metal as the contacts, a higher density metal, from heavily doped polysilicon. The substrate is back-etched beneath the bridge members up to the epitaxial layer to form a barrel through which the flyer may travel. After the wafer is diced, the individual dies have a counter mass face-plate bonded atop the bridge and contacts.

REFERENCES:
patent: 4471697 (1984-09-01), McCormick et al.
patent: 4602565 (1986-07-01), MacDonald et al.
patent: 4729315 (1988-03-01), Proffit et al.
patent: 4788913 (1988-12-01), Stroud et al.

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