Integrated silicon optical isolator

Details Integrated silicon optical isolator Integrated silicon optical isolator

2008-05-19

2009-10-20

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C257S082000

Reexamination Certificate

active

07605010

ABSTRACT:
The present invention provides an optical isolator and a method of forming the optical isolator. Embodiments of the optical isolator include a silicon layer having at least one trench formed therein. The trench has a resistance that varies in response to electromagnetic radiation. Embodiments of the optical isolator also include at least one first diode formed in the silicon layer such that the trench encompasses the first diode. The first diode is configured to generate electromagnetic radiation in response to an applied signal. Embodiments of the optical isolator further include first and second regions formed in contact with the trench such that the resistance between the first and second contact regions varies in response to the electromagnetic radiation generated by the first diode.

REFERENCES:
patent: 4884112 (1989-11-01), Lorenzo et al.
patent: 5438210 (1995-08-01), Worley
patent: 7180098 (2007-02-01), Speyer et al.
Picosecond Photoconductivity by Robert B. Hammond Fall 1986 Los Alamos Science pp. 48-65.

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