Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2007-06-25
2011-11-08
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
C257SE23114, C257SE23062, C257SE21001, C257S660000, C257S678000, C257S699000, C257S684000, C257S784000, C257S786000, C257S707000, C257S704000, C257S711000
Reexamination Certificate
active
08053872
ABSTRACT:
The present invention integrates a shield on a flat, no-lead (FN) semiconductor package, which has multiple rows of contact pads along any side. The FN semiconductor package will have at least one inner row and one outer row of contact pads on at least one side. The inner and outer rows of contact pads and a die attach pad form the foundation for the FN semiconductor package. A die is mounted on the die attach pad and connected by wirebonds to certain contact pads of the inner rows of contact pads. An overmold body is formed over the die, die attach pad, wirebonds, and inner row of contact pads, and substantially encompasses each contact pad of the outer row of contact pads. A conformal coating is applied over the overmold body, including the exposed surfaces of the contact pads of the outer row of contact pads, providing a shield.
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Swan Geoff
Warren, Jr. Waite R.
RF Micro Devices, Inc.
Williams Alexander O
Withrow & Terranova, P.L.L.C.
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