Integrated sensor for scanning probe microscope

Details Integrated sensor for scanning probe microscope Integrated sensor for scanning probe microscope

1995-08-14

1996-12-10

Chilcot, Richard

Measuring and testing

Surface and cutting edge testing

Roughness

250306, 250307, G01B 734

Patent

active

055832865

ABSTRACT:
A piezoresistive layer extends in the middle of a cantilever extending from a support section. The cantilever is made of n type silicon and is covered with a silicon oxide film. Electrodes are connected to the both ends of the piezoresistive layer. A p type silicon region is formed at the free end of the cantilever, and includes a sharply pointed portion to provide a probe. An electrode is connected to a p.sup.+ type silicon region formed in the p type silicon region, and an electrode is connected to an n.sup.+ type silicon region formed in a position more than 10 .mu.m apart from the p type silicon region. A rectangular through hole is formed in the cantilever between the piezoresistive layer and the probe.

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M. Tortonese et al, Atomic Force Microscopy Using a Piezoresistive Cantiliver, Mar., 1991.

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