Integrated sensor and circuitry and process therefor

Details Integrated sensor and circuitry and process therefor Integrated sensor and circuitry and process therefor

2008-02-19

2010-06-08

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Having enclosed cavity

C257S686000, C257SE23042

Reexamination Certificate

active

07732302

ABSTRACT:
A micromachined sensor and a process for fabrication and vertical integration of a sensor and circuitry at wafer-level. The process entails processing a first wafer to incompletely define a sensing structure in a first surface thereof, processing a second wafer to define circuitry on a surface thereof, bonding the first and second wafers together, and then etching the first wafer to complete the sensing structure, including the release of a member relative to the second wafer. The first wafer is preferably a silicon-on-insulator (SOI) wafer, and the sensing structure preferably includes a member containing conductive and insulator layers of the SOI wafer. Sets of capacitively coupled elements are preferably formed from a first of the conductive layers to define a symmetric capacitive full-bridge structure.

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