Integrated semiconductor structure including a...

Details Integrated semiconductor structure including a... Integrated semiconductor structure including a...

2005-09-07

2008-03-04

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S565000

Reexamination Certificate

active

07339209

ABSTRACT:
An integrated semiconductor structure includes a heterojunction bipolar transistor and a Schottky diode. The structure has a substrate, the heterojunction bipolar transistor overlying and contacting the substrate, wherein the heterojunction bipolar transistor includes a transistor collector layer, and a Schottky diode overlying the substrate and overlying the transistor collector layer. The Schottky diode includes a Schottky diode barrier layer structure that desirably is not of the same material, doping, and thickness as the transistor collector layer.

REFERENCES:
patent: 5221638 (1993-06-01), Ohtsuka et al.
patent: 5278443 (1994-01-01), Mori et al.
patent: 5567961 (1996-10-01), Usagawa et al.
patent: 6191015 (2001-02-01), Losehand et al.
patent: 6724039 (2004-04-01), Blanchard
patent: 6787910 (2004-09-01), Lee et al.
patent: 2001/0016377 (2001-08-01), Mizutani
patent: 2004/0119129 (2004-06-01), Giboney
A. Seabaugh et al., “Resonant-tunneling mixed-signal circuit technology”, Solid State Electronics, vol. 43, pp. 1355-1365 (1999).

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