Integrated semiconductor product with metal-insulator-metal...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S535000, C438S396000

Reexamination Certificate

active

10865463

ABSTRACT:
To fabricate an integrated semiconductor product with integrated metal-insulator-metal capacitor, first of all a dielectric auxiliary layer (6) is deposited on a first electrode (2, 3, 5). This auxiliary layer (6) is then opened up (15) via the first electrode. Then, a dielectric layer (7) is produced, and the metal track stack (8, 9, 10) for the second electrode is then applied to the dielectric layer (6). This is followed by the patterning of the metal-insulator-metal capacitor using known etching processes. This makes it possible to produce dielectric capacitor layers of any desired thickness using materials which can be selected as desired. In particular, this has the advantage that via etches can be carried out significantly more easily than in the prior art, since it is not necessary to etch through the residual dielectric capacitor layer above the metal tracks.

REFERENCES:
patent: 4971924 (1990-11-01), Tigelaar et al.
patent: 5674771 (1997-10-01), Machida et al.
patent: 5918135 (1999-06-01), Lee et al.
patent: 6086951 (2000-07-01), Lin et al.
patent: 6090656 (2000-07-01), Randazzo
patent: 6166423 (2000-12-01), Gambino et al.
patent: 6184551 (2001-02-01), Lee et al.
patent: 6291337 (2001-09-01), Sidhwa
patent: 6313003 (2001-11-01), Chen
patent: 6320244 (2001-11-01), Alers et al.
patent: 6329234 (2001-12-01), Ma et al.
patent: 6730573 (2004-05-01), Ng et al.
patent: 6815796 (2004-11-01), Ota et al.
patent: 199 45 939 (2001-04-01), None
patent: 0 800 217 (1997-03-01), None
patent: 2 353 404 (2001-02-01), None
patent: 11233723 (1999-08-01), None
patent: 228497 (2000-08-01), None
Kar-Roy, A., et al.; “High Density Metal Insulator Metal Capacitors Using PECVD Nitride for Mixed Signal and RF Circuits”; Advanced Process Technology; pp. 245-247.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated semiconductor product with metal-insulator-metal... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated semiconductor product with metal-insulator-metal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated semiconductor product with metal-insulator-metal... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3864694

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.