Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-06-19
2007-06-19
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S535000, C438S396000
Reexamination Certificate
active
10865463
ABSTRACT:
To fabricate an integrated semiconductor product with integrated metal-insulator-metal capacitor, first of all a dielectric auxiliary layer (6) is deposited on a first electrode (2, 3, 5). This auxiliary layer (6) is then opened up (15) via the first electrode. Then, a dielectric layer (7) is produced, and the metal track stack (8, 9, 10) for the second electrode is then applied to the dielectric layer (6). This is followed by the patterning of the metal-insulator-metal capacitor using known etching processes. This makes it possible to produce dielectric capacitor layers of any desired thickness using materials which can be selected as desired. In particular, this has the advantage that via etches can be carried out significantly more easily than in the prior art, since it is not necessary to etch through the residual dielectric capacitor layer above the metal tracks.
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Kar-Roy, A., et al.; “High Density Metal Insulator Metal Capacitors Using PECVD Nitride for Mixed Signal and RF Circuits”; Advanced Process Technology; pp. 245-247.
Koller Klaus
Körner Heinrich
Schrenk Michael
Baker & Botts L.L.P.
Infineon - Technologies AG
Pert Evan
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