Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2009-10-28
2011-11-22
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S106000, C257SE29341, C257SE33027, C372S044010
Reexamination Certificate
active
08063408
ABSTRACT:
In an integrated semiconductor optical device, a first cladding layer is made of a first conductivity type semiconductor. A first active layer for forming a first semiconductor optical device is provided on the first cladding layer in a first area of a principal surface of a substrate. A second active layer for forming a second semiconductor optical device is provided on the first cladding layer in a second area of the principal surface. A second cladding layer made of a second conductivity type semiconductor is provided on the second active layer. A third cladding layer made of a first conductivity type semiconductor is provided on the first active layer. A tunnel junction region is provided between the first active layer and the third cladding layer. The first active layer is coupled to the second active layer by butt joint. The second and third cladding layers form a p-n junction.
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Smith , Gambrell & Russell, LLP
Sumitomo Electric Industries Ltd.
Vu Hung
Webb Vernon P
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