Integrated semiconductor optical device

Details Integrated semiconductor optical device Integrated semiconductor optical device

2011-01-25

2011-01-25

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S025000, C372S043010, C372S050110, C372S050122, C372S081000, C257S615000, C257SE29089

Reexamination Certificate

active

07876799

ABSTRACT:
A semiconductor laser (a first semiconductor optical device) and an optical modulator (a second semiconductor optical device) are integrated on the same n-type InP substrate. The semiconductor laser butt-joined to the optical modulator. Each of the semiconductor laser and the optical modulator has a Be-doped p-type InGaAs contact layer. The p-type InGaAs contact layers have a Be-doping concentration of 7×1018cm−3or more, and a thickness of 300 nm or less.

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Miyazaki, Y., Extinction ratio improvement of an electroabsorption modulator by using Be as a ρ-type dopant with small diffusion coefficient,Journal of Applied Physics, 93(7):3823-3826 (2003).

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