Integrated semiconductor memory with clock generation

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Clock or pulse waveform generating

Reexamination Certificate

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Details

C327S294000, C327S037000

Reexamination Certificate

active

11217676

ABSTRACT:
An integrated semiconductor memory includes a clock generator circuit driven by an external clock signal and a control circuit driven by the external clock signal. The clock generator circuit generates an internal clock signal with a first level if the external clock signal level lies above a sensitivity level of the clock generator circuit for at least the duration of a sensitivity time of the clock generator circuit, and generates the internal clock signal with a second level if the external clock signal level lies below the sensitivity level for at least the duration of the sensitivity time of the clock generator circuit. The control circuit controls the clock generator circuit such that the control circuit selects the sensitivity time of the clock generator circuit in response to characteristics of the external clock signal.

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