Integrated semiconductor lasers and photodetectors

Details Integrated semiconductor lasers and photodetectors Integrated semiconductor lasers and photodetectors

1998-11-05

2000-11-14

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 43, 372 99, 372 96, 372102, 437 51, 437129, H01S 319, H01L 2120

Patent

active

061480169

ABSTRACT:
A method for fabricating vertical cavity lasers and photodetectors on the same substrate from a single epitaxial layer to form integrated laser/photodetector structures. A DBR/cavity/DBR photodetector structure is formed on the substrate with the DBR on the input side of the photodetector being fabricated from relatively low index contrast, high refractive index semiconducting layers. Some of those same DBR layers on the input side of the photodetector are then converted from a low index contrast, high refractive index semiconducting material to a low refractive index material by, for example, etching the DBR/cavity/DBR structure down to the substrate layer and using lateral oxidation or etching, to form relatively high index contrast, high reflectivity mirrors for the laser.

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