Integrated semiconductor laser device

Details Integrated semiconductor laser device Integrated semiconductor laser device

1991-05-29

1992-10-20

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 23, 372 46, H01S 319

Patent

active

051576821

ABSTRACT:
A semiconductor laser device for oscillating laser beams having different wavelengths from adjacent regions includes an n-type first cladding layer, a first active layer, a p-type second cladding layer, a p-type first contact layer, a p-type third cladding layer, a second active layer, an n-type fourth cladding layer, and an n-type second contact layer in this order from an n-type substrate. The first and second electrodes are arranged on the first and second contact layers, respectively, and the third electrode is arranged on the lower surface of the substrate. A difference in energy gaps of the second cladding layer and the first contact layer is so large that no current flows across the second cladding layer and the first contact layer, and a difference in energy gaps of the third cladding layer and the first contact layer is so large that no current flows across the third cladding layer and the first contact layer. P-type intermediate energy-gap layers are formed into stripes between the second cladding layer and the first contact layer and between the third cladding layer and the first contact layer, respectively, and current paths are respectively formed through the intermediate energy-gap layers. The two current paths are substantially aligned to each other in a vertical direction.

REFERENCES:
patent: 5048040 (1991-09-01), Paoli

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