Integrated semiconductor laser apparatus

Details Integrated semiconductor laser apparatus Integrated semiconductor laser apparatus

1996-01-22

1998-07-28

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 96, 385 50, 385 37, 385131, H01S 319

Patent

active

057871051

ABSTRACT:
An integrated semiconductor laser apparatus is constructed in such an arrangement that a core layer is located in the proximity of an active layer so as to be in an evanescent-field area of light propagating in the active layer and that a carrier concentration of a second cladding layer is higher than that of a first cladding layer. Thus, most evanescent waves of light propagating in the core layer propagate in the first cladding layer of the low carrier concentration. Since the rate of evanescent waves absorbed by carriers is very low, the integrated semiconductor laser apparatus can propagate the light with small losses.

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