Integrated semiconductor laser and waveguide device

Details Integrated semiconductor laser and waveguide device Integrated semiconductor laser and waveguide device

2005-08-30

2005-08-30

Harvey, Min Sun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045013, C372S046012, C372S039000, C257S079000, C257S094000, C257S098000

Reexamination Certificate

active

06937632

ABSTRACT:
A buried heterojunction laser optically coupled with a buried waveguide electro-absorption (EA) optical modulator via an active layer is fabricated on a substrate carrying a number of deposited semiconductor layers. The laser component includes a laser current conduction region and an adjacent laser current confinement region. The waveguide component includes a waveguide current confinement region comprising first and second current blocking structures formed from different grown semiconductor layers. An extension of the first current blocking structure is interposed between the second current blocking structure and the waveguide current conduction region. Because each of the components is flanked by current confinement regions of differing structures, the resistive and capacitative properties of the current confinement regions can be selected to optimise the performance of that component for a particular use.

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Patent Abstracts of Japan—vol. 2000, no. 9 (Oct. 13, 2000) & JP 2000 156539 A (NEC Corp) Jun. 6, 2000.

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