Integrated semiconductor diode laser and photodiode structure

Details Integrated semiconductor diode laser and photodiode structure Integrated semiconductor diode laser and photodiode structure

1990-06-11

1991-07-16

Mintel, William

Coherent light generators

Particular component circuitry

Optical pumping

357 30, 357 17, 357 16, 372 50, H01L 3112

Patent

active

050328794

ABSTRACT:
An integrated semiconductor structure with optically coupled laser diode (11) and photodiode 12A, both devices having etched, vertical facets (16A, 21). The photodiode has a spatially non-uniform sensitivity profile with respect to the incident light beam (18A) emitted by the laser. This is due to the varying distance from the laser facet and/or to variations in the angle of incidence and results in photocurrents produced by the photodiode that depend on the intensity distribution of the light beam. The spatially non-uniform sensitivity profile allows the measurement of the far-field intensity distribution of the laser and thus on-wafer screening of lasers with respect to their mode stability.

REFERENCES:
patent: 4698129 (1987-10-01), Puretz et al.
patent: 4736231 (1988-04-01), Ayabe et al.
patent: 4817109 (1989-03-01), Miyauchi et al.
Nobuhara et al., "One-Chip Optical Transmitter with a Microcleaned Facet Al6a As/GaAs GRIN-SCH SQW Laser," IEEE Journal of Quantum Electronics, vol. QE-23, No. 2, Feb. 1987, pp. 160-163.
Bouadma et al., "GaAs/AlGaAs Ridge Waveguide Laser Monolithically Integrated with a Photodetector Using Ion Beam Etching," Electronics Letters, 30, Jul. 1987, vol. 23, No. 16, pp. 855-857.
Uchida et al., "Integrated AlGaAs Two-Beam LD-PD Array Fabricated by Reactive Ion Beam Etching," Electronics Letters, 22 May 1986, vol. 22, No. 11, pp. 585-587.

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