Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Patent
1998-01-30
2000-02-22
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
257414, 338 34, H01L 2358, H01L 2714, H01L 2982, H01L 2984
Patent
active
060283319
ABSTRACT:
To manufacture integrated semiconductor devices comprising chemoresistive gas microsensors, a semiconductor material body is first formed, on the semiconductor material body are successively formed, reciprocally superimposed, a sacrificial region of metallic material, formed at the same time and on the same level as metallic connection regions for the sensor, a heater element, electrically and physically separated from the sacrificial region and a gas sensitive element, electrically and physically separated from the heater element; openings are formed laterally with respect to the heater element and to the gas sensitive element, which extend as far as the sacrificial region and through which the sacrificial region is removed at the end of the manufacturing process.
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Benedetto Vigna
Mastromatteo Ubaldo
Carlson David V.
Galanthay Theodore E.
Saadat Mahshid
STMicroelectronics S.r.l.
Wilson Allan R.
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