Integrated semiconductor device including an insulated-gate fiel

Details Integrated semiconductor device including an insulated-gate fiel Integrated semiconductor device including an insulated-gate fiel

1990-01-19

1991-08-13

Pascal, Robert J.

Oscillators

Solid state active element oscillator

Transistors

357 22, H03B 500

Patent

active

050399586

ABSTRACT:
An integrated semiconductor device, including an insulated-gate field effect transistor biased to a constant level in order to obtain for the transistor an N-shaped drain-source current characteristic as a function of the drain-source voltage so that it presents a negative differential conductance zone, characterized in that it comprises means for applying, between the drain and the source of the field effect transistor, a voltage whose value is in the range of values the drain-source voltage corresponding to the negative conductance zone.

REFERENCES:
M. Au-Ron et al., FET Logic Device, IBM Technical Disclosure Bulletin, vol. 24, No. 1A, Jun. 1981, pp. 82-84.

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