Integrated semiconductor device having insulated gate field effe

Details Integrated semiconductor device having insulated gate field effe Integrated semiconductor device having insulated gate field effe

1979-02-26

1982-10-05

Munson, Gene M.

357 41, 357 56, 357 59, H01L 2702, H01L 2906, H01L 2904

Patent

active

043530850

ABSTRACT:
An integrated semiconductor device having a plurality of IG FETs respectively formed an epitaxial semiconductor layer in plural apertures of a buried insulating film, and having regions for wiring extending under the buried insulating film within the semiconductor substrate. The wiring area has conductivity type opposite to the semiconductor substrate and functions to electrically connect between plural IG FETs. Thereby more complicated wirings can be realized. This region lying under the buried insulating film in the substrate can also function as the common well in the complementary type integrated semiconductor device and can eliminate the problem of defective operation which is likely to be caused in a complementary device having the buried insulating film.

REFERENCES:
patent: 4041518 (1977-08-01), Shimizu et al.
patent: 4219836 (1980-08-01), McElroy
patent: 4251828 (1981-02-01), Sakurai
RCA COS/MOS Integrated Circuits Manual, RCA Corp., Somerville, N.J. (3/71) pp. 24-26.

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