Integrated semiconductor device having a thyristor

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Lateral structure

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Details

257163, 257164, H01L 2974, H01L 31111

Patent

active

055810969

ABSTRACT:
An integrated semiconductor device having a thyristor includes outer npn-transistors, outer pnp-transistors, and an inner npn-transistor. The outer pnp-transistors and the inner npn-transistor are interconnected so as to form a thyristor to allow the inner transistor to be biased into conduction. Furthermore, a current flow takes place via the outer npn-transistors and the inner npn-transistor. The integrated semiconductor device having a thyristor minimizes interference produced in neighboring components.

REFERENCES:
patent: 4258377 (1981-03-01), Miyata et al.

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