Integrated semiconductor device comprising a chemoresistive gas

Details Integrated semiconductor device comprising a chemoresistive gas Integrated semiconductor device comprising a chemoresistive gas

1998-06-03

2000-04-18

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

257253, 257414, 438 49, 204424, 204426, 204431, H01L 2358

Patent

active

060518545

ABSTRACT:
An integrated semiconductor device comprises, reciprocally superimposed, a thermally insulating region; a thermal conduction region of a high thermal conductivity material; a passivation oxide layer; and a gas sensitive element. The thermal conduction region defines a preferential path towards the gas sensitive element for the heat generated by the heater element, thereby the heat dispersed towards the substrate is negligible during the operation of the device.

REFERENCES:
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patent: 4984446 (1991-01-01), Yagawara et al.
patent: 5236569 (1993-08-01), Murase et al.
patent: 5434551 (1995-07-01), Chen et al.
patent: 5447618 (1995-09-01), Sugiyama et al.
patent: 5545300 (1996-08-01), Yun et al.
patent: 5787866 (1998-08-01), Sugiyama et al.
patent: 5976335 (1999-11-01), Kato et al.
patent: 5976350 (1999-11-01), Yamada et al.
Stoffel, Axel M., "Micromachining and ASIC technology" Microelectronics Journal, May 25 1994 pp. 145-156.

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