Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of...
Reexamination Certificate
2007-02-08
2009-06-02
Sefer, A. (Department: 2893)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
C438S268000, C257S492000, C257S493000, C257SE21345, C257SE21346
Reexamination Certificate
active
07541248
ABSTRACT:
An integrated semiconductor device containing semiconductor elements that have respective desired on-resistances and breakdown voltages achieves appropriate characteristics as a whole of the integrated semiconductor element. The integrated semiconductor device includes a plurality of semiconductor elements formed in a semiconductor layer and each having a source of an n type semiconductor, a drain of the n type semiconductor and a back gate of a p type semiconductor between the source and the drain. At least a predetermined part of the drain of one semiconductor element and a predetermined part of the drain of another semiconductor element have respective impurity concentrations different from each other.
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Ludikhuize, et al. “Extended (180V) Voltage in 0.6μm Thin-Layer-SOI A-BCD3 Technology on 1μm BOX for Display, Automotive & Consumer Applications” Proceedings of the 14th International Symposium on Power Semiconductor Devices & ICS, Jun. 4-7, 2002, pp. 77-80, Santa Fe, NM.
Nitta Tetsuya
Terashima Tomohide
McDermott Will & Emery LLP
Renesas Technology Corp.
Sefer A.
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