Integrated semiconductor device

Details Integrated semiconductor device Integrated semiconductor device

1978-07-17

1980-05-27

Wojciechowicz, Edward J.

357 22, 357 50, 357 55, H01L 2702

Patent

active

042053340

ABSTRACT:
An integrated semiconductor device including at least one first vertical-type junction field effect transistor (vertical JFET) having a triode-like unsaturated voltage-current characteristic and at least one second vertical JFET having a bipolar-transistor-like saturated voltage-current characteristic, both being integrally formed in a semiconductor body. Both the first and second vertical JFET are much similar in general arrangement to each other, thus allowing simultaneous forming thereof by the same manufacturing process, without sacrificing the good characteristics of these two types of transistors.

REFERENCES:
patent: 4117587 (1978-10-01), Kano et al.

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