Integrated semiconductor circuits with contact interconnect leve

Details Integrated semiconductor circuits with contact interconnect leve Integrated semiconductor circuits with contact interconnect leve

1983-09-09

1985-07-02

Edlow, Martin H.

Stock material or miscellaneous articles

Composite

Of bituminous or tarry residue

357 71, 357 65, 428620, 420548, H01L 2348

Patent

active

045271844

ABSTRACT:
Contact interconnect levels for integrated circuit with a semiconductor substrate consisting of silicon in which and on which components forming the circuit are produced, are composed essentially of an aluminum/silicon/titanium alloy having a proportion of about 1 through 2% by weight silicon and a titanium content of less than about 0.5% by weight. The reliability and loadability of electrical interconnects for VLSI systems is increased by utilization of this metallization.

REFERENCES:
patent: 3609470 (1971-09-01), Kuiper
patent: 4359486 (1982-11-01), Patalong et al.
H. Murrmann, "Modern Bipolar Technology for High-Performance ICs", Siemens Forsch.-u. Entwickl. (Siemens Research and Development Reports), vol. 5, No. 6, (1976) pp. 353-359.
P. B. Ghate et al., Electromigration Testing of Ti:W/Al and Ti:W/Al-Cu Film Conductors, Thin Solid Films, vol. 55, (1978), pp. 113-123.
I. Ames et al., "Reduction of Electromigration in Aluminum Films by Copper Doping", IBM J. Res. Develop., vol. 14, (1970), pp. 461-463.
M. P. Lepselter, "Beam-Lead Technology", The Bell System Tech. J., vol. 45, (1966), pp. 233-253.

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