Integrated semiconductor circuit with improved boost operation s

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307482, 3072962, 307264, H03K 17687, H03K 1901

Patent

active

051873974

ABSTRACT:
An integrated semiconductor circuit has a boost circuit that may improve boost operation speed. The boost circuit employs a P-channel type transistor as a driver. The back gate of the P-channel type transistor is connected to a charge-up circuit so that the back gate may be charged to a predetermined level before a boost signal is applied to the driver.

REFERENCES:
patent: 3983414 (1976-09-01), Stafford et al.
patent: 4092548 (1978-05-01), Beilstein et al.
patent: 5010259 (1991-04-01), Inoue et al.
patent: 5039882 (1991-08-01), Arakawa

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated semiconductor circuit with improved boost operation s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated semiconductor circuit with improved boost operation s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated semiconductor circuit with improved boost operation s will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2149930

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.