Patent
1990-02-16
1991-04-16
Jackson, Jr., Jerome
357 51, 357 65, 357 45, 357 68, 357 236, H01L 2944
Patent
active
050087312
ABSTRACT:
An integrated semiconductor circuit, in which the D.C. part of the wiring containing only D.C. information lies on a part of the insulating layer located on the surface which is considerably thinner than the parts of the insulating layer under wiring parts not forming part of the D.C. wiring. Preferably, for this purpose a substrate contact diffusion connected to a reference potential is provided under the D.C. wiring parts. As a result, H.F. interference signals on the D.C. wiring are reduced so that noise and distortion are considerably reduced.
REFERENCES:
patent: 4613883 (1986-09-01), Tihanyi
patent: 4646126 (1987-02-01), Iizuka
patent: 4654689 (1987-03-01), Fujii
patent: 4656058 (1987-04-01), Dwyer
patent: 4737830 (1988-04-01), Patel et al.
patent: 4785202 (1988-11-01), Toyoda
patent: 4796084 (1989-01-01), Kamasaki et al.
Linssen Andre J.
Van De Grift Robert E. J.
van der Veen Martien
Biren Steven R.
Jackson, Jr. Jerome
U.S. Philips Corp.
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