Integrated semiconductor circuit including a tantalum silicide d

Details Integrated semiconductor circuit including a tantalum silicide d Integrated semiconductor circuit including a tantalum silicide d

1986-03-24

1987-07-14

Edlow, Martin H.

Stock material or miscellaneous articles

Composite

Of bituminous or tarry residue

357 67, 428620, 428651, 428662, H01L 2348

Patent

active

046806121

ABSTRACT:
An integrated semiconductor circuit consisting of a silicon substrate having an impurity doped circuit therein, and a layer of silicon dioxide formed on the substrate and having a contact hole therein overlying the circuit. An outer contact interconnect level composed of aluminum or an aluminum alloy provides electrical contact to the circuit. A tantalum disilicide diffusion barrier layer is disposed between the circuit and the interconnect level, with a layer of substantially pure tantalum both above and below the tantalum disilicide diffusion barrier layer.

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