Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Patent
1998-09-28
1999-11-23
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
257 79, 257103, H01L 3300
Patent
active
059904992
ABSTRACT:
An integrated semiconductor circuit has a component formed of a semiconductor substrate with an active pn junction formed between a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The semiconductor circuit also has a protective circuit that is associated with the component and serves to dissipate overvoltages and/or electrostatic charges. The protective circuit has a protective pn junction formed in a semiconductor mount with a first semiconductor mount region of the first conductivity type and a second semiconductor mount region of the second conductivity type. The second semiconductor mount region of the second conductivity type is electrically coupled to the first semiconductor region formed in the semiconductor substrate of the first conductivity type.
REFERENCES:
patent: 5491349 (1996-02-01), Komoto et al.
Patent Abstracts of Japan No. 59-188181 (Mitsuhiro et al.), dated Oct. 25, 1984.
"Off-Chip Electrostatic Discharge Protection", IBM Technical Disclosure Bulletin, vol. 32, No. 6B, Nov. 1989.
Althaus Hans-Ludwig
Kuhlmann Werner
Spath Werner
Stath Norbert
Greenberg Laurence A.
Lerner Herbert L.
Ngo Ngan V.
Siemens Aktiengesellschaft
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