Integrated semiconductor circuit

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Signal transmission integrity or spurious noise override

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327381, 327534, 257360, 361 90, 361 91, H03K 508

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active

058218041

ABSTRACT:
An integrated semiconductor circuit includes a semiconductor substrate. A number of first potential buses carry a first supply potential of the semiconductor circuit during operation. A number of second potential buses carry a second supply potential of the semiconductor circuit during operation. A number of circuit portions formed on the substrate are each connected between one of the first and one of the second potential buses for being supplied with electrical voltage. Connection points are formed on the substrate and are each assigned to one of the circuit portions for receiving an input or output signal for the circuit portion during operation of the circuit portion. Protective circuits are formed on the substrate and are each assigned to one of the circuit portions for preventing overvoltage. The protective circuits each have an input side connected to one of the connection points and an output side connected to the circuit portion. A common potential bus bar carries a reference potential being common with respect to all of the connection points during operation. The protective circuits have discharge paths coupled with the potential bus bar for dissipating overvoltages.

REFERENCES:
patent: 5079612 (1992-01-01), Takamoto et al.
patent: 5426323 (1995-06-01), Reczek et al.
patent: 5521415 (1996-05-01), Kondo
patent: 5581104 (1996-12-01), Lowrey et al.
patent: 5646434 (1997-07-01), Chrisostomides et al.
Japanese Patent Abstract No. 6069454 (Yoshiyuki), dated Nov. 3, 1994, Semiconductor Storage Device.
Japanese Patent Abstract No. 5299598 (Terutaka), dated Dec. 11, 1993, Semiconductor Device.
Japanese Patent Abstract No. 3156965 (Tomonobu), dated Apr. 7, 1991, Semiconductor Integrated Circuit Device.

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