Integrated semiconductor array combination with standard element

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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257202, 257205, 257370, 257443, 257465, H01L 3106, H01L 2710

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active

055236111

ABSTRACT:
The invention relates to a combination of monolithically integrated semiconductor arrays each having a number of prefabricated standard elements that can be connected together using one or more metalization layers to form different signal processing units. The standard elements prefabricated on the semiconductor array comprise a number of base cells, a number of capacitors, a number of output transistors and a number of photodiodes arranged in rows and columns. The base cells each contain a number of npn and pnp transistors and a number of resistors. The common arrangement of base cells for signal processing and a photodiode array arranged in rows and columns in addition to the capacitors and output transistors permit low cost manufacture at short notice and in small production quantities of a wide variety of different photodetectors with integrated electronic circuits.

REFERENCES:
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patent: 5055716 (1991-10-01), El Gamel
patent: 5162887 (1992-11-01), Dierschke
Zurl, K.; Streibl, N.: "Optoelectronic array interconnections," 24, (1992), pp. 405-414, Optical and Quantum Electronics.
Audet, S. A.: Schoonefeld; "High-Purity Silicon Radiation-Sensor Array". In: Nuclear Instruments and Methods in Physics Research A275, 1989, pages 517-526.
Forrest, St.R.: Optoelectronic Integrated Circuits, In: Proceedings of the IEEE, vol. 75, No. 11, Nov. 1987, pp. 1488-1496.
Thomas, S. L.; Seller, P.:"A Silicon Pixel Detector with Routing for External VLSI Readout". In: Nuclear Instruments and Methods in Physics Research, A 275, 1989 pp. 564-573.
Aubert, Ph.; et al.: "Monolithic Optical Position Encoder with On-Chip Photodiodes". In: IEEE Journal of Solid-State Circuits, vol. 23, No. 2, Apr. 1988, pp. 465-473.

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