Integrated SCR current sourcing sinking device

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 36, 357 44, 357 46, 307640, 307641, 307645, 307648, 365 90, 365180, H01L 2974

Patent

active

048916838

ABSTRACT:
This disclosure relates to a programmable write-once, read-only semiconductor memory array which has an improved current source for each bit line and an improved current sink for each Word line. This programmable write-once, read-only semiconductor memory array utilizes a SCR (PNPN or NPNP) on the end of each Word line of the array to function as a current sink to minimize voltage drop on the Word line and a SCR (PNPN or NPNP) on each Bit line of the array for current sourcing purposes. This disclosure also relates to an integrated SCR (PNPN or NPNP) for use with a plurality of connected semiconductor devices to provide either a current sourcing or current sinking or drawing function for the plurality of connected semiconductor devices.

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W. Spofford, "The D13T-A Prog. Uni J. Trans.", G.E. Appl. Note 90.70, Nov. 1967.

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