Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Reexamination Certificate
2006-02-21
2006-02-21
Lee, Hsien-Ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
C257S117000, C257S127000, C257S135000, C438S092000, C438S167000, C438S175000, C438S571000, C438S574000, C438S576000, C438S578000
Reexamination Certificate
active
07002187
ABSTRACT:
An integrated Schottky diode and method of manufacture of such a diode is disclosed. In a first aspect, a Schottky diode comprises a semiconductor substrate. The semiconductor substrate includes an epitaxial layer (EPI) on the substrate region. The diode includes a plurality of guard rings in the EPI layer and a plurality of oxidized slots. Finally, the diode includes metal within the plurality of slots to form a Buried Power Buss. A portion of the metal is completely oxide isolated from the other elements of the diode. In a second aspect, a method for manufacturing a Schottky diode comprises providing a substrate region, A buried N+ region providing an epitaxial (EPI) layer. The method also includes providing a plurality of guard rings in the EPI layer and providing a plurality of slots in the semiconductor substrate that is in contact with the EPI layer and the substrate region. The method further includes a plurality of oxidizing the slots and providing metal within the plurality of slots to form a Buried Power Buss structure. A portion of the metal is completely oxide isolated from the other elements of the diode. Accordingly, the system and method in accordance with the present invention a Schottky diode is provided that has low forward drop, low leakage at low and high voltages, and has a high reverse breakdown voltage.
REFERENCES:
patent: 6518152 (2003-02-01), Hshieh et al.
patent: 6566733 (2003-05-01), Husher et al.
patent: 2003/0022474 (2003-01-01), Grover et al.
Lee Hsien-Ming
Micrel Inc.
Sawyer Law Group LLP
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