Integrated RF switching cell built in CMOS technology and utiliz

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing two electrode solid-state device

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Details

327493, 257275, 257379, 257533, 257536, H01L 29868

Patent

active

057867224

ABSTRACT:
An integrated CMOS diode with an injection ring that enables construction of an integrated CMOS RF switch. Construction techniques of using a diffused n-well resistor, parasitic capacitance and construction of the diode underneath a bonding input pad contribute to performance of the switch as well as saving space needed to construct the switch.

REFERENCES:
patent: 3035186 (1962-05-01), Doucette
patent: 4896243 (1990-01-01), Chatterjee et al.
patent: 5081517 (1992-01-01), Contiero et al.

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