Integrated RF front end

Telecommunications – Transmitter – Power control – power supply – or bias voltage supply

Reexamination Certificate

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C455S127300, C455S126000, C455S129000, C330S010000

Reexamination Certificate

active

07088971

ABSTRACT:
A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Preferred fabrication techniques include stacking multiple FETs to form switching devices. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits.

REFERENCES:
patent: 4079336 (1978-03-01), Gross
patent: 4241316 (1980-12-01), Knapp
patent: 5032799 (1991-07-01), Milberger et al.
patent: 5375256 (1994-12-01), Yokoyama et al.
patent: 6107885 (2000-08-01), Miguelez et al.
patent: 6191653 (2001-02-01), Camp et al.
patent: 6239657 (2001-05-01), Bauer
patent: 6297696 (2001-10-01), Abdollahian et al.
patent: 6308047 (2001-10-01), Yamamoto et al.
patent: 6380802 (2002-04-01), Pehike et al.
patent: 6449465 (2002-09-01), Gailus et al.
patent: 6509799 (2003-01-01), Franca-Neto
patent: 6934520 (2005-08-01), Rozsypal
patent: 2003/0032396 (2003-02-01), Tsuchiya et al.
patent: 2003/0224743 (2003-12-01), Okada et al.
patent: 2004/0121745 (2004-06-01), Meck
Raab, et al., “Power Amplifiers and Transmitters for RF and Microwave”, IEEE Transactions on Microwave Theory and Techniques, vol. 50, No. 3, pp. 814-826, Mar. 2002, USA.
Ueda, et al., “A 5Ghz-Band On-Chip Matching CMOS MMIC Front-End”, 11th GAAS Symposium—Munich 2003, pp. 101-104, Germany.
Nelson Pass, Pass Labs, “Cascode Amp Design”, Audio Electrnoics, pp. 1-4, Mar. 1978.
Lester F. Eastman, P.I., “High Power, Broadband, Linear, Solid State Amplifier”, 16th Quaterly Rep. under MURI Contract No. N00014-96-1-1223 for period Jun. 1, 2000-Aug. 31, 2000, Sep. 2000, pp. 1-8.
Jeon, et al., “A New “Active” Predistorter with High Gain Using Cascode-FET Structures”, IEEE Radio Frequency Integrated Circuits Symposium, 2002, pp. 253-256.
Hsu, et al., “Comparison of Conventional and Thermally-Stable Cascode (TSC) AlGaAs/GaAs HBTs for Microwave Power Applications”, Jml of Solid-State Electronics, V. 43, Sep. 1999, 2 pgs.
Kim, et al., “High-Performance V-Band Cascode HEMT Mixer and Downconverter Module”, IEEE Transactions on Microwave Theory and Techniques, vol. 51, No. 3, pp. 805-810,Mar. 2003.
Mishra, et al., “High Power Broadband Amplifiers for 1-18 GHz Naval Radar” University of California, Santa Barbara, pp. 1-9, Jul. 1, 1998.
Perraud, et al., “A Direct-Conversion CMOS Transceiver for the 802.11a/b/g WLAN Standard Utilizing a Cartesian Feedback Transmitter”, IEEE Journal of Solid-State Circuits, vol. 39, No. 12, Dec. 2004, pp. 2226-2238.
Rohde, et al., “Optic/Millimeter-Wave Converter for 60 Ghz Radio-Over-Fiber Systems”, Fraunhofer-Institut für Angewandte Festkörperphysik Freiburg i. Br., Apr. 1997, pp. 1-5.
Darabi, et al. “A Dual-Mode 801.11b/Bluetooth Radio in 0.35-μm CMOS”, IEEE Journal of Solid-State Cirucits, vol. 40, No. 3, Mar. 2005, pp. 698-706.
Schlechtweg, et al., “Multifunctional Integration Using HEMT Technology”, Fraunhofer Institute for Applied Solid State Physics, (date uncertain, believed Mar. 1997).

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