Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...
Reexamination Certificate
2007-12-11
2007-12-11
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
C257S528000, C257S532000, C257SE27009, C327S565000
Reexamination Certificate
active
10944057
ABSTRACT:
A highly integrated radio front-end module. In one embodiment a semiconductor substrate is processed with various circuit components in the substrate, as well as interconnections for the various circuit components, embedding the circuit components into the substrate. One or more circuit components may be further connected with a separate integrated circuit, the separate integrated circuit bonded to the semiconductor substrate via contact points processed into the substrate.
REFERENCES:
patent: 4672421 (1987-06-01), Lin
patent: 5446309 (1995-08-01), Adachi et al.
patent: 6274937 (2001-08-01), Ahn et al.
patent: 6420197 (2002-07-01), Ishida et al.
patent: 6529093 (2003-03-01), Ma
patent: 6531668 (2003-03-01), Ma
patent: 6573822 (2003-06-01), Ma et al.
patent: 6693499 (2004-02-01), Goyette et al.
patent: 6822535 (2004-11-01), Ma et al.
patent: 6850133 (2005-02-01), Ma
patent: 6880235 (2005-04-01), Ma
patent: 6933808 (2005-08-01), Ma et al.
patent: 6934448 (2005-08-01), Akashi et al.
patent: 6972650 (2005-12-01), Ma
patent: 6998691 (2006-02-01), Baugh et al.
patent: 7065327 (2006-06-01), Macnally et al.
patent: 7088964 (2006-08-01), O
patent: 2003/0020094 (2003-01-01), Shrauger
patent: 2003/0045044 (2003-03-01), Dentry et al.
patent: 2003/0132455 (2003-07-01), Utsunomiya et al.
patent: 2004/0140870 (2004-07-01), Kishimoto
patent: 2004/0232523 (2004-11-01), Shamsaifar et al.
patent: 2005/0030128 (2005-02-01), Ma et al.
patent: 2005/0122001 (2005-06-01), Ma et al.
patent: 2005/0134413 (2005-06-01), Bar et al.
patent: 2005/0140468 (2005-06-01), Wang
patent: WO 00/39853 (2000-07-01), None
patent: WO 2005/000733 (2005-01-01), None
patent: WO 2005/000733 (2005-01-01), None
ELECTRONICSWEEKLY.COM, 3GSM: First Silicon GPRS Radio Front End From Phillips:, Feb. 23, 2004, 2 pages.
SEARCHNETWORKING.COM, “Balun”, 3 pages.
Dallas Semiconductor Maxim, “Silicon Germanium (SiGe) Technology Enhances Radio Front-End Performance”, Mar. 15, 2000, 7 pages.
Jong-Soo Lee, “MCM Technology for RF Tunable Band Pass Filters Implemented by Integration of GaAs FETs and Selectively Oxidized Porous Silicon (SOPS)”,IEEE 2000 Proceedings 50th Electronic Components and Technology Conference, May 21-24, 2000, Las Vegas, NV, p. 426-431, XP-001054602.
Robert Aigner, “RF-MEMS Filters Manufactured on Silicon: Key Facts About Bulk-Acoustic-Wave Technology”,2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers (Cat. No. 03EX668), 2003, p. 157-161, XP-002356308.
Linda P.B. Katehi, “MEMS and Si Micromachined Circuits for High-Frequency Applications”,IEEE Transactions on Microwave Theory and Techniques, vol. 50, No. 3, Mar. 2002, p. 858-866, XP-001102280.
Clark T-C Nguyen, “Communications Applications of Microelectromechanical Systems”, Proceedings 1998 Sensors Expo, May 19-21, 1998, San Jose, CA, p. 447-455, XP-002190275.
Pending U.S. Appl. No. 10/816,264, filed Mar. 31, 2004; Final Office Action dated Jul. 17, 2007.
Kipnis Issy
Rao Valluri R.
Blakely , Sokoloff, Taylor & Zafman LLP
Mandala Jr. Victor A.
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