Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With pn junction isolation
Reexamination Certificate
2005-05-26
2011-10-18
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With pn junction isolation
C257S531000, C257S536000
Reexamination Certificate
active
08039925
ABSTRACT:
A plurality of devices, such as devices that are utilized for implementing radio frequency applications, can be formed in the same substrate. Each of these devices may be formed over a triple well that includes at least one well capable of being biased. Each of the wells is coupled to a well bias through a resistor. In some embodiments, a plurality of wells operating at a relatively high frequency may be connected to the same bias potential, each through separate resistors. The noise coupling may be reduced through the use of the bias resistors.
REFERENCES:
patent: 5457652 (1995-10-01), Brahmbhatt
patent: 6055655 (2000-04-01), Momohara
patent: 6157073 (2000-12-01), Lehongres
Wong Ting-Wah
Woo Chong L.
Altera Corporation
Martine & Penilla & Gencarella LLP
Nadav Ori
LandOfFree
Integrated radio frequency circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated radio frequency circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated radio frequency circuits will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4268430