Integrated quantum well lasers having uniform thickness lasing r

Details Integrated quantum well lasers having uniform thickness lasing r Integrated quantum well lasers having uniform thickness lasing r

1986-02-28

1988-04-26

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 23, 372 46, 372 49, H01S 319

Patent

active

047409789

ABSTRACT:
A semiconductor laser device comprises a plurality of layers of semicondung materials, first contact means providing electrical contact to a basal layer of the device and second contact means providing electrical contact to an upper layer of the device, with at least one layer disposed between the basal layer and the upper layer being selected to be sufficiently thin that size quantization occurs, i.e. that a semiconductor device with a quantum well structure is created. The second contact means comprises a first strip-like contact overlying a first lasing region of the device and a second strip-like contact overlying a second lasing region of the device. The light losses associated with photons generated by laser action in the first region are intentionally made different from the light losses associated with photons generated by laser action in the second region which permits laser action at two distinct wavelengths in a monolithic device.

REFERENCES:
patent: 4318059 (1982-03-01), Lang et al.
patent: 4476563 (1984-10-01), Van Ruyren
patent: 4577207 (1986-03-01), Copeland
patent: 4577321 (1986-03-01), Carney et al.
patent: 4607370 (1986-08-01), Mukai et al.
patent: 4627065 (1986-12-01), Logan et al.

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