Integrated quantum well feedback structure

Details Integrated quantum well feedback structure Integrated quantum well feedback structure

1990-11-20

1992-07-14

Jackson, Jr., Jerome

Amplifiers

Signal feedback

Combined with control of bias voltage of signal amplifier

357 30, 330 59, 330308, 307491, 307494, H01L 3108, H01L 3112

Patent

active

051307626

ABSTRACT:
An integrated semiconductor device comprising a light emitting portion and a light detecting portion is disclosed. The integrated semiconductor device comprises two multiple quantum well P-I-N structures formed on a single substrate, one of the P-I-N structures being forward biased to emit light and the other of the P-I-N structures being reverse biased to detect light. Because of the quantum confined Stark effect, the reversed biased P-I-N structures is highly absorbing to light emitted by the forward biased P-I-N structure. The integrated semiconductor device may be utilized to implement an optical feedback path for a receiver.

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