Integrated processing for an etch module using a hard mask techn

Details Integrated processing for an etch module using a hard mask techn Integrated processing for an etch module using a hard mask techn

1997-02-04

2000-06-13

Kunemund, Robert

Semiconductor device manufacturing: process

Chemical etching

438942, 216 41, 216 51, H01L 2144

Patent

active

060749466

ABSTRACT:
A method of fabricating a semiconductor device includes etching holes through at least one deposited layer to an underlying structure. A hard mask is deposited on an upper surface of a device to be etched, the mask is patterned with the aid of a photoresist, and holes are etched in the hard mask. After removal of the photoresist, contact or via holes are etched through the patterned hard mask in the deposited layer(s) to reach the underlying structure.

REFERENCES:
patent: 5369053 (1994-11-01), Fang
Patent Abstracts of Japan vol. 018. No. 141 (E-1520), Mar. 9, 1994 & JP 05 326719 A (OKI Electric Ind. Co Ltd) Dec. 10, 1993 * Abstract * Claim 1-5, 8-11 & JP 05 326719 A (OKI Electric Ind. Co. Ltd.) Dec. 10, 1993 * Figures *.
Patent Abstracts of Japan vol. 008, No. 190 (E-263), Aug. 31, 1984 & JP 59 078585 A (Hitachi Seisakusho KK) May 7, 1984 col. 3, line 11--col. 4, line 25; Figures 1 & 2.

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