Integrated process for thin film resistors with silicides

Details Integrated process for thin film resistors with silicides Integrated process for thin film resistors with silicides

2007-10-11

2010-02-16

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making passive device

C257SE21004, C257SE21350

Reexamination Certificate

active

07662692

ABSTRACT:
The formation of devices in semiconductor material is provided using an HF/HCL cleaning process. In one embodiment, the method includes forming at least one hard mask overlaying at least one layer of resistive material. Forming at least one opening to a working surface of a silicon substrate of the semiconductor device. Cleaning the semiconductor device with a diluted HF/HCL process. The HF/HCL process including, applying a dilute of HF for a select amount of time and applying a dilute of HCL for a specific amount of time. After cleaning with the diluted HF/HCL process, forming a silicide contact junction in the at least one of the opening to the working surface of the silicon substrate and forming interconnect metal layers.

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