Integrated power transistor with ballasting resistance and break

Details Integrated power transistor with ballasting resistance and break Integrated power transistor with ballasting resistance and break

1974-09-09

1976-02-03

Edlow, Martin H.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 13, 357 36, 357 40, 307318, H01L 2702, H01L 2990, H01L 2972, H03K 326

Patent

active

039368637

ABSTRACT:
An integrated power transistor has at least one emitter region, having a ballasting resistance to reduce the possibility of second breakdown. Also integrated within the device is a voltage control diode, located between the collector terminal and the emitter terminal, to protect against high voltages caused by transient surges, particularly during switching times.

REFERENCES:
patent: 3435295 (1969-03-01), Ladd et al.
patent: 3510771 (1970-05-01), Embree et al.
patent: 3577062 (1971-05-01), Hoffman et al.
patent: 3609460 (1971-09-01), Ollendorf et al.
patent: 3619741 (1971-11-01), Morgan
patent: 3740621 (1973-06-01), Carley

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