Integrated power transistor comprising means for reducing therma

Details Integrated power transistor comprising means for reducing therma Integrated power transistor comprising means for reducing therma

1989-07-17

1991-09-03

Jackson, Jr., Jerome

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 36, 307254, 330257, 330288, H01L 2972

Patent

active

050459104

ABSTRACT:
An integrated power transistor with reduced sensitivity to thermal stresses and improved resistance to direct secondary breakdown, comprising a plurality of transistors having their emitter regions connected so as to define a common emitter terminal, their collector regions connected so as to define a common collector region, and the same plurality of diodes connected to the respective transistors to form therewith a current mirror circuit, each base of the transistors being connected to the first terminal of a corresponding resistor, the second terminal of the corresponding resistors being connected to a common base.

REFERENCES:
patent: 4085411 (1978-04-01), Genesi
patent: 4160986 (1979-07-01), Johnson
patent: 4476439 (1984-10-01), Sato
patent: 4481483 (1984-11-01), Kawamura
patent: 4536662 (1985-08-01), Fujii
patent: 4682197 (1987-07-01), Villa et al.
patent: 4739190 (1988-04-01), Alzati et al.
patent: 4886982 (1989-12-01), Villa et al.

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