Integrated power switching semiconductor devices including IGT a

Details Integrated power switching semiconductor devices including IGT a Integrated power switching semiconductor devices including IGT a

1983-12-05

1986-10-21

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 2314, 357 38, 307577, 307581, 307584, H01L 2978, H01L 2974, H03K 17687

Patent

active

046188720

ABSTRACT:
Hybrid power switching semiconductor devices advantageously integrate IGT and MOSFET structures. The IGT and MOSFET portions of the overall device include respective gate structures each having an associated gate electrode capacitance, and the hybrid device includes a resistance element connecting the IGT and MOSFET gates. The gate structures preferably comprise polysilicon electrodes, and the resistance element comprises a polysilicon bridge formed at the same time during device fabrication. The overall device has only a single gate terminal, which is connected relatively directly to one of the IGT and MOSFET gates, and indirectly through the resistance element to the other of the IGT and MOSFET gates such that an RC time delay network is defined. Two different types of power switching functions are achieved depending upon whether the overall device gate terminal is connected nearer the IGT gate or the MOSFET gate.

REFERENCES:
patent: 4072975 (1978-02-01), Ishitani
patent: 4145703 (1979-03-01), Blanchard et al.
patent: 4260908 (1981-04-01), Mings et al.
patent: 4364073 (1982-12-01), Becke et al.
patent: 4402003 (1983-08-01), Blanchard
patent: 4417385 (1983-11-01), Temple
Nathan Zommer, "The Monolithic HV BIPMOS", IDEM 1981, pp. 263-266.
Leipold et al, International Electron Devices meeting, Washington, DC, Dec. 1980, vol. 4.3, pp. 79-82.

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