Integrated power DMOS circuit with protection diode

Details Integrated power DMOS circuit with protection diode Integrated power DMOS circuit with protection diode

1989-12-19

1992-06-02

Mintel, William

357 234, 357 2313, 357 42, H01L 2702

Patent

active

051191628

ABSTRACT:
Methods and circuits of integrated DMOS, CMOS, NPN, and PNP devices include self-aligned DMOS (411) with increased breakdown voltage and ruggedness for recovery from transients including additional Zener diodes (402/474).

REFERENCES:
patent: 4546370 (1985-10-01), Curran
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patent: 4831424 (1989-05-01), Yoshida et al.
patent: 4862233 (1989-08-01), Matsushita et al.
patent: 4903106 (1990-02-01), Fukunaga et al.
patent: 4980741 (1990-12-01), Temple
Andreini, et al., "A new Integrated Silicon Gate Technology Combining Bipolar-Linear, CMOS Logic, and DMOS Power Parts," IEEE Trans. vol. 33, No. 12, pp. 2025-2030, Dec. 1986.
Sun et al., "Modeling of the On-Resistance of LDMOS, VDMOS and VMOS Power Transistors", IEEE Trans., vol. 27, No. 2, Feb. 1980, pp. 356-358.
Fong et al, "Power DMOS for High-Frequency and Switching Applications," IEEE Trans, Vol, 27, No. 2, Feb. 1980, 322-325.
Coen et al., "A High-Performance Planar Power MOSFET", IEEE Trans., vol. 27, No. 2, Feb. 1980, pp. 340-342.

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