Amplifiers – With semiconductor amplifying device – Including plural amplifier channels
Reexamination Certificate
2011-06-14
2011-06-14
Nguyen, Khanh V (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including plural amplifier channels
C330S12400D
Reexamination Certificate
active
07961048
ABSTRACT:
An integrated power amplifier can include a carrier amplifier, where the carrier amplifier is connected to a first quarter wave transformer at the input of the carrier amplifier. In addition, the power amplifier can further include at least one peaking amplifier connected in parallel with the carrier amplifier; a first differential combining structure, where the first combining structure includes a first plurality of quarter wave transformers that are configured to combine respective first differential outputs of the carrier amplifier in phase to generate a first single-ended output signal, and a second differential combining structure, where the second combining structures includes a second plurality of quarter wave transformers that are configured to combine respective second differential outputs of the at least one peaking amplifier in phase to generate a second single-ended output signal, where the first single-ended output signal and the second single-ended output signal are combinable in-phase to provide an overall output.
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Winifried Bakalski et al., “Lumped and Distributed Lattice-type LC-Baluns.” IEEE MTT-S Digest 2002. pp. 209-212.
Patrick Reynaert et al., “A Fully Integrated CMOS RF Power Amplifier with Parallel Power Combining and Power Control.” IEEE 2005. pp. 137-140.
Office Action for Korean Application No. 10- 2009-0124261 dated Feb. 17, 2011.
An Kyu Hwan
Laskar Joy
Lee Chang-Ho
Lee Dong Ho
Oakley Michael Alan
Georgia Tech Research Corporation
Nguyen Khanh V
Samsung Electro-Mechanics Company
Sutherland & Asbill & Brennan LLP
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