Integrated power amplifier

Amplifiers – Signal feedback – Combined with control of bias voltage of signal amplifier

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Details

330307, 357 51, H01L 2972, H03F 314

Patent

active

040729796

ABSTRACT:
An integrated power amplifier, composed of a multiplicity of elemental transistors epitaxially grown on a semiconductor chip, has base, emitter and collector terminals each connected in parallel to corresponding electrodes of the several elemental transistors. Each elemental transistor comprises two active emitter zones on opposite sides of a central contact zone conductively linked therewith by restricted connecting zones within the substrate, the contact zones of these transistors carrying emitter electrodes which are connected by a metallic strip to the emitter terminal. The array of transistors is divided into several parallel rows in each of which the width of the connecting zones progressively decreases from a transistor electrically closest to the base terminal to a transistor electrically closest to the emitter terminal, resulting in a progressive increase of the individual emitter resistances of these transistors to an extent compensating the voltage drop along the metallic strip between successive emitter electrodes.

REFERENCES:
patent: 3609460 (1971-09-01), Ollendorf et al.
patent: 3619741 (1971-11-01), Morgan
patent: 3812478 (1974-05-01), Tomisawa et al.
patent: 3936863 (1976-02-01), Olmstead

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