Integrated polishing and electroless deposition

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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Details

C438S689000, C438S691000, C438S692000

Reexamination Certificate

active

06984587

ABSTRACT:
The invention provides a method of modifying a substrate comprising the steps of providing a substrate comprising a base and a first metal, chemically-mechanically polishing the substrate, depositing a second metal onto the substrate, and polishing the substrate again to remove any metal overburden for a planarized surface with minimum metal loss.

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patent: 11-231925 (2001-02-01), None
patent: WO02/23613 (2002-03-01), None

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