Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-01-10
2006-01-10
Le, Thao P. (Department: 2818)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S689000, C438S691000, C438S692000
Reexamination Certificate
active
06984587
ABSTRACT:
The invention provides a method of modifying a substrate comprising the steps of providing a substrate comprising a base and a first metal, chemically-mechanically polishing the substrate, depositing a second metal onto the substrate, and polishing the substrate again to remove any metal overburden for a planarized surface with minimum metal loss.
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Cabot Microelectronics Corporation
Le Thao P.
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