Measuring and testing – Fluid pressure gauge – Diaphragm
Patent
1997-07-30
2000-10-17
Oen, William
Measuring and testing
Fluid pressure gauge
Diaphragm
G01L 906
Patent
active
061314668
ABSTRACT:
The pressure sensor is integrated in an SOI (Silicon-on-Insulator) substrate using the insulating layer as a sacrificial layer, which is partly removed by chemical etching to form the diaphragm. To fabricate the sensor, after forming the piezoresistive elements and the electronic components integrated in the same chip, trenches are formed in the upper wafer of the substrate and extending from the surface to the layer of insulating material; the layer of insulating material is chemically etched through the trenches to form an opening beneath the diaphragm; and a dielectric layer is deposited to outwardly close the trenches and the opening. Thus, the process is greatly simplified, and numerous packaging problems eliminated.
REFERENCES:
patent: 3893228 (1975-07-01), George et al.
patent: 4320664 (1982-03-01), Rehn et al.
patent: 4510671 (1985-04-01), Kurtz et al.
patent: 4766666 (1988-08-01), Sugiyama et al.
patent: 5095401 (1992-03-01), Zavracky et al.
patent: 5510276 (1996-04-01), Diem et al.
European Search Report from European application No. 96830435.2, filed Jul. 31, 1996.
Silicon-on-Insulator Wafer Bonding-Wafer Thinning Technological Evaluations, Haisma et al., SGS-Thomson MI 02/93519473, pp. 1426-1443 (no date).
CMOS Integrated Silicon Pressure Sensor, Ishihara et al., IEEE J of Solid-State Circuits, vol. Sc-22, No. 2 Apr., 1987, pp. 151-156.
Micromachining and ASIC Technology, Stoffel, Microelectronics Journal, 25 (1994) pp. 145-156 (no month).
Novel Fully CMOS-Compatible Vacuum Sensor, Paul et al., Elsevier Science S.A. Sensors and Actuators (1995), pp. 143-147 (no month).
Surface-Micromachined Piezoresistive Pressure Sensor, Lisec et al., Sensor 95 Kongre.beta.band pp. 21-25 (no date).
Surface-Miromachined Microdiaphragm Pressure Sensors, Sugiyama et al., Sensors and Materials, 4, 5 (1993), pp. 265-275 (no month).
Micromachining Improves Automotive Sensors, Meth, Electronic Design Report, Feb. 5, 1996, pp. 67-79.
Integrated Silicon Pressure Sensor for Automotive Application with Electronic Trimming, Kress et al., 950533, pp. 35-40 (no date).
Ferrari Paolo
Vigna Benedetto
Villa Flavio
Galanthay Theodore E.
Morris James H.
Oen William
SGS--Thomson Microelectronics S.r.l.
LandOfFree
Integrated piezoresistive pressure sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated piezoresistive pressure sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated piezoresistive pressure sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-458222