Integrated photodiode/transimpedance amplifier

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With light activation

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257227, 257443, 257444, 257446, 257461, 438 57, H01L 2974, H01L 31111, H01L 27148, H01L 29768

Patent

active

057675384

ABSTRACT:
An integrated circuit photodetector includes a transimpedance amplifier including a differential amplifier stage with PNP emitter-coupled transistors and a PNP input transistor which are biased only by base currents of the emitter-coupled transistors, to achieve low input bias current. Low noise operation is achieved by bypass capacitors coupled between the bases and emitters of the input transistors, respectively. A constant current source supplies a current which develops a small pedestal voltage across a resistor to bias the non-inverting input of the transimpedance amplifier so as to avoid nonlinear amplification of low level light signals. A positively biased N-type guard tub surrounds the photodetector, which is formed in a junction-isolated N region on a P substrate, to collect electrons generated in the substrate by deep-penetrating IR light to prevent them from causing amplification errors. In one embodiment, a feedback network includes a resistor connected between the output of a buffer driven by the transimpedance amplifier and an inverting input thereof, and a capacitor connected between the output and inverting input of the transimpedance amplifier to provide low noise, fast settling operation.

REFERENCES:
patent: 3478214 (1969-11-01), Dillman
patent: 4309604 (1982-01-01), Yoshikawa et al.
patent: 4313127 (1982-01-01), Su et al.
patent: 4462002 (1984-07-01), Schade, Jr.
patent: 4535233 (1985-08-01), Abraham
patent: 4563656 (1986-01-01), Baum
patent: 4564818 (1986-01-01), Jones
patent: 4609880 (1986-09-01), Dermitzakis et al.
patent: 4626675 (1986-12-01), Gundner
patent: 4780625 (1988-10-01), Zobel
patent: 4888562 (1989-12-01), Edler
patent: 4920395 (1990-04-01), Muro
patent: 5010381 (1991-04-01), Shiba
patent: 5105145 (1992-04-01), Neth
patent: 5111156 (1992-05-01), Hachiuma
patent: 5149956 (1992-09-01), Norton
patent: 5216386 (1993-06-01), Wyatt
patent: 5252851 (1993-10-01), Mita et al.
patent: 5300826 (1994-04-01), Okanobu et al.
patent: 5302868 (1994-04-01), Fergus
patent: 5347231 (1994-09-01), Bertuccio et al.
patent: 5373182 (1994-12-01), Norton
patent: 5453611 (1995-09-01), Oozu et al.
patent: 5602415 (1997-02-01), Kubo et al.
"Rail-To-Rail In-And-Out IC OP Amps Run Off 2.7V", by Frank Goodenough, Electronic Design, May 16, 1994, pp. 51-65.
SSO-WS-7.56, Silicon Photonics, Detector Division of Janos Technology, Inc.
"Bipolar op amp achieves JFET-like speeds", by William F. Davis, Electronic Design, Sep. 1, 1983, pp. 145-150.
"Bipolar Innovations Provide Greater Op AMP Stability", by Julian Evans, New Electronics, May 28, 1985, pp. 50 & 53.

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