Patent
1985-02-11
1988-09-13
Larkins, William D.
357 16, 357 22, 357 41, H01L 2714, H01L 3300
Patent
active
047713259
ABSTRACT:
An integrated photodetector-amplifier is described which is planar and exhibits excellent circuit characteristics including low input capacitance, high speed, and high sensitivity. Also, certain self-alignment features and a planar technology made fabrication of the circuits simpler and easier than most such circuits.
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IEEE Transactions on Microwave Theory and Techniques, vol. MTT-30, No. 10, Oct. 1982, U. Koren et al., "Recent Developments in Monolithic Integration of InGaAsP/InP Optoelectronic Devices", pp. 1641-1649.
IEEE Electron Device Letters, vol. EDL-5, No. 7, Jul. 1984, D. Wake et al., "A Self-Aligned In.sub.0.53 Ga.sub.0.47 As Junction Field-Effect Transistor Grown by Molecular Beam Epitaxy", pp. 285-287.
Cheng Julian
DeLoach, Jr. Bernard C.
Forrest Stephen R.
American Telephone & Telegraph Co., AT&T Bell Laboratories
Larkins William D.
Nilsen W. G.
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