Integrated photocathode

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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257 11, 257184, 257258, 257294, 257431, 257448, 257522, H01L 2972

Patent

active

059125004

ABSTRACT:
A transferred-electron photocathode or other opto-electronic device having one light-receiving side and one electronic side, in which multiple photocathodes are processed concurrently on a wafer for front and back side contacts and anti-reflection layers. After the wafer-level processing, the individual cells are diced, and each is placed in a rectangular recess formed in a window body with the light-receptive part of the photocathode facing the window. The integration is aided by several novel processes including coining a chip recess into a window, selective etching of titanium over chromium, and using a single metal sheet member for electrically contacting the photocathode, forming part of the vacuum envelope, and providing an exterior electrical tab.

REFERENCES:
patent: 3958143 (1976-05-01), Bell
patent: 5047821 (1991-09-01), Costello et al.
patent: 5326978 (1994-07-01), Aebi et al.
patent: 5374826 (1994-12-01), La Rue et al.
Costello et al., "Transferred electron photocathode with greater than 5% quantum efficiency beyond 1 micron," SPIE Proceedings, vol. 1449, 1991, pp. 40-50.
La Rue et al., "High quantum efficiency photomultiplier with fast time response," SPIE Proceedings, vol. 2022, 1993, pp. 64-73.
Costello et al., "Transferred electron photocathode with greater than 20% quantum efficiency beyond 1 micron," SPIE Proceedings, vol. 2550, pp. 177-187.

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